A comprehensive simulation study has been conducted to show fine-grain reconfigurability in CMOS circuits using work-function engineering (WFE) on Schottky barrier (SB) FinFETs for sub-10-nm gate length. The study has three subsections. First. two-transistor (2T) and 4T and-or-invert (AOI)/or-and-invert (OAI) gates with select bits that allow multiple logic functions are introduced. https://emporiumsmokeshopstles.shop/product-category/candles/